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| SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors High DC current gain High collector current Low collector-emitter saturation voltage 3 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2 1 VPS05161 Type SMBTA13/ MMBTA13 SMBTA14/ MMBTA14 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Marking s1M s1N 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCES VCBO VEBO Values 30 30 10 300 500 100 200 330 150 -65 ... 150 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 C Junction temperature Storage temperature Thermal Resistance IC ICM IB IBM Ptot Tj Tstg RthJS mA mA mW C Junction - soldering point1) 210 K/W Feb-18-2002 SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics VBEsat hFE IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CES typ. max. Unit 30 30 10 - - 100 10 100 V nA A nA - SMBTA13 SMBTA14 SMBTA13 SMBTA14 VCEsat 5000 10000 10000 20000 - - 1.5 2 V Transition frequency I C = 50 mA, V CE = 5 V, f = 20 MHz fT 125 - - MHz 1) Pulse test: t 300s, D = 2% 2 Feb-18-2002 SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 10 CCB0 (C EB0) pF SMBTA 13/14 EHP00823 360 mW 300 270 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 CCB0 5 C EB0 C 150 TS 0 10 -1 10 0 10 1 VCB0 , (VEB0 ) V Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC SMBTA 13/14 EHP00824 Transition frequency fT = f (IC) VCE = 5V, f = 20MHz 10 3 MHz fT T SMBTA 13/14 EHP00825 tp D= T tp 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 10 3 C 3 Feb-18-2002 SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 1000 10 3 SMBTA 13/14 EHP00826 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 1000 10 3 mA SMBTA 13/14 EHP00827 C mA C 150 C 25 C -50 C 150 C 25 C -50 C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 0 0.5 1.0 V V CEsat 1.5 10 0 0 1.0 2.0 V V BEsat 3.0 Collector cutoff current ICBO = f (TA) VCB = 30V 4 SMBTA 13/14 EHP00828 DC current gain hFE = f (I C) VCE = 5V 10 6 h FE 5 SMBTA 13/14 EHP00829 10 nA CB0 10 3 5 typ max 10 5 5 125 C 25 C 10 2 5 -55 C 10 4 10 1 5 5 10 0 0 50 100 TA C 150 10 3 10 -1 10 0 10 1 10 2 mA 10 3 C 4 Feb-18-2002 |
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